Title

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High Speed and Low Power CMOS Technology Based Ram-Cam Memory Design

Authors

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K.Vidhya kamu1 and Mr.P.Karthikeyan2

Keywords

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Content-Addressable Memory (CAM), Random Access Memory (RAM), Complementary Metal Oxide Semi Conductor (CMOS), Transistors

Issue Date

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December – 2015

Abstract

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Content-Addressable Memory (CAM) is a special type of memory, which is used in very-high speed searching applications. The other names of CAM are the associative memory, associative storage and the associative array, which is used for retrieving the contents with high speed based on the address. We proposed an XOR based content addressable memory with 8 transistors. The energy consumed by the proposed CAM design was lowered, when compared to the conventional low-power CAM design. The proposed method is used to design the Complementary Metal Oxide Semi Conductor (CMOS) technology based RAM-CAM memory architecture. The Euclidean distance based matching is used for comparing and retrieving the contents in the CAM based memory. The proposed CMOS technology is used to reduce the leakage power and the delay time in the transistors. The speed of the proposed method is increased by using the CAM method in searching and retrieving the content based on the address. The parameters considered for the design are energy, power, and the time. 

Page(s)

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14-17

ISSN

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2347- 4734

Source

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Vol. 2, No.5, December 2015

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